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Search for "broad area semiconductor lasers (BAL)" in Full Text gives 1 result(s) in Beilstein Journal of Nanotechnology.
Beilstein J. Nanotechnol. 2016, 7, 1783–1793, doi:10.3762/bjnano.7.171
Figure 1: Color plot of the RAS signal during reactive ion etching (RIE) of a partially masked laser substrat...
Figure 2: Transients of the average reflected intensity in arbitrary units (a.u.) at a photon energy of 2.5 e...
Figure 3: Scanning electron microscopy (SEM) image of a facet of a lithographically masked and then reactive-...
Figure 4: SIMS intensity – sputter time profile of the CsAl-signal with logarithmic scaling. Displayed are pr...
Figure 5: Illustrations of the wafer layout and sample design (required in the example) to monitor the etch p...
Figure 6: Single transients of the average reflected intensity (top) and the RAS signal (bottom) at 2.4 eV of...
Figure 7: Scanning electron microscope (SEM) images of a film waveguide lens on a laser ridge. (a) Tilted top...